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Dislocations and a domains coupling in PbTiO3 thin films.
- Source :
- Applied Physics Letters; 11/13/2023, Vol. 123 Issue 20, p1-5, 5p
- Publication Year :
- 2023
-
Abstract
- The interaction of domain structure and defects in ferroelectric thin films has been studied for decades. However, the role of dislocations and thermal stability of microstructures is still poorly studied. By combining transmission electron microscopy, x-ray diffraction experiments, and phase-field simulations, we show that dislocation pairs induced by post-annealing above 550 °C provide a stress field stabilizing a domains in 30 nm thick tetragonal PbTiO<subscript>3</subscript> films on SrTiO<subscript>3</subscript> substrate, initially exhibiting pure c domains. Based on phase-field simulations, we further discuss the effects of single dislocations and dislocation pairs on the nucleation of a-domains and the occurrence of non-ferroelastic 180° domains. Dislocations, and the possibility to tune them using an appropriate thermal annealing process, offer a path for modulating the domains and domain wall states and, thus, the physical properties of ferroelectric films. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 123
- Issue :
- 20
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 173703360
- Full Text :
- https://doi.org/10.1063/5.0173901