Back to Search Start Over

Structure and magnetic properties of the manganite SrMnO3.

Authors :
Dong, Fuxiao
Lu, Gefei
Ma, Qinghua
Zhao, Bojun
Wang, Haiou
Huo, Dexuan
Tan, Weishi
Source :
Journal of Materials Science: Materials in Electronics; Dec2023, Vol. 34 Issue 36, p1-7, 7p
Publication Year :
2023

Abstract

The structure, magnetic, transport and magnetoresistance properties of SrMnO<subscript>3</subscript> sample have been investigated. The SrMnO<subscript>3</subscript> sample has single-phase structure with hexagonal symmetry, which is obtained by the X-ray diffraction. The scanning electron microscope reveals the particles of the sample are evenly distributed. The composition of the SrMnO<subscript>3</subscript> sample is detected using the energy dispersive spectrometer, indicating the element ratio of Sr:Mn:O = 19.25:20.35:60.40. The magnetic, electrical transport and the magnetoresistance effect are studied via the temperature dependences of the magnetization, the resistivity and the magnetoresistance. An antiferromagnetic phase transition near 300 K appears in the SrMnO<subscript>3</subscript> sample, and no significant entropy change can be found in the antiferromagnetic sample. The sample shows the insulator state since the resistance increases gradually with the decrease of temperature. Therefore, SrMnO<subscript>3</subscript> is an antiferromagnetic insulator material. Moreover, the resistivity reduces significantly with the applied magnetic field, indicating an existence of magnetoresistance. Remarkably, the room-temperature magnetoresistance of the antiferromagnetic insulator SrMnO<subscript>3</subscript> reaches 16.68% under 60 kOe field. This work opens our understanding of magneto-transport and magnetic properties of the antiferromagnetic SrMnO<subscript>3</subscript>. The discovery of magnetoresistance near room temperature in the antiferromagnetic insulator (SrMnO<subscript>3</subscript>) is of great significance for the development of antiferromagnetic spintronics. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
34
Issue :
36
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
174308182
Full Text :
https://doi.org/10.1007/s10854-023-11777-w