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Tuning the band gap of the CIGS solar buffer layer Cd1−xZnxS (x=0–1) to achieve high efficiency.
- Source :
- Optoelectronics Letters; Feb2024, Vol. 20 Issue 2, p100-106, 7p
- Publication Year :
- 2024
-
Abstract
- To evaluate the impact of zinc sulfate (ZnSO<subscript>4</subscript>) concentration on the structural properties of the films, Cd<subscript>1−x</subscript>Zn<subscript>x</subscript>S thin films were formed on glass substrates using chemical bath deposition (CBD) in this study. The effect of ZnSO<subscript>4</subscript> precursor concentration on the surface morphology, optical properties, and morphological structure of the Cd<subscript>1−x</subscript>Zn<subscript>x</subscript>S films was investigated. To study the impact of zinc doping content on the performance metrics of Cu(In<subscript>1−x</subscript>Ga<subscript>x</subscript>)Se<subscript>2</subscript> (CIGS) cells in the experimental group and to improve the buffer layer thickness, simulations were run using one-dimensional solar cell capacitance simulator (SCAPS-1D) software. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 16731905
- Volume :
- 20
- Issue :
- 2
- Database :
- Complementary Index
- Journal :
- Optoelectronics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 174685160
- Full Text :
- https://doi.org/10.1007/s11801-024-2222-6