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Spin-resolved topology and partial axion angles in three-dimensional insulators.

Authors :
Lin, Kuan-Sen
Palumbo, Giandomenico
Guo, Zhaopeng
Hwang, Yoonseok
Blackburn, Jeremy
Shoemaker, Daniel P.
Mahmood, Fahad
Wang, Zhijun
Fiete, Gregory A.
Wieder, Benjamin J.
Bradlyn, Barry
Source :
Nature Communications; 1/16/2024, Vol. 15 Issue 1, p1-17, 17p
Publication Year :
2024

Abstract

Symmetry-protected topological crystalline insulators (TCIs) have primarily been characterized by their gapless boundary states. However, in time-reversal- (T -) invariant (helical) 3D TCIs—termed higher-order TCIs (HOTIs)—the boundary signatures can manifest as a sample-dependent network of 1D hinge states. We here introduce nested spin-resolved Wilson loops and layer constructions as tools to characterize the intrinsic bulk topological properties of spinful 3D insulators. We discover that helical HOTIs realize one of three spin-resolved phases with distinct responses that are quantitatively robust to large deformations of the bulk spin-orbital texture: 3D quantum spin Hall insulators (QSHIs), "spin-Weyl" semimetals, and T -doubled axion insulator (T-DAXI) states with nontrivial partial axion angles indicative of a 3D spin-magnetoelectric bulk response and half-quantized 2D TI surface states originating from a partial parity anomaly. Using ab-initio calculations, we demonstrate that β-MoTe<subscript>2</subscript> realizes a spin-Weyl state and that α-BiBr hosts both 3D QSHI and T-DAXI regimes. 3D higher-order topological insulators (HOTIs) exhibit 1D hinge states depending on extrinsic sample details, while intrinsic features of HOTIs remain unknown. Here, K.S. Lin et al. introduce the framework of spin-resolved topology to show that helical HOTIs can realize a doubled axion insulator phase with nontrivial partial axion angles. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
20411723
Volume :
15
Issue :
1
Database :
Complementary Index
Journal :
Nature Communications
Publication Type :
Academic Journal
Accession number :
174817865
Full Text :
https://doi.org/10.1038/s41467-024-44762-w