Cite
(Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes.
MLA
Allerman, Andrew A., et al. “(Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes.” ECS Meeting Abstracts, vol. MA2023-02, no. 1, Dec. 2023, p. 1688. EBSCOhost, https://doi.org/10.1149/MA2023-02351688mtgabs.
APA
Allerman, A. A., Binder, A. T., Armstrong, A. M., Steinfeldt, J., & Kaplar, R. J. (2023). (Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes. ECS Meeting Abstracts, MA2023-02(1), 1688. https://doi.org/10.1149/MA2023-02351688mtgabs
Chicago
Allerman, Andrew A., Andrew T. Binder, Andrew M. Armstrong, Jeffrey Steinfeldt, and Robert J. Kaplar. 2023. “(Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes.” ECS Meeting Abstracts MA2023-02 (1): 1688. doi:10.1149/MA2023-02351688mtgabs.