Cite
Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates.
MLA
Liu, Fang, et al. “Record Peak Current Density of over 1500 KA/Cm2 in Highly Scaled AlN/GaN Double-Barrier Resonant Tunneling Diodes on Free-Standing GaN Substrates.” Applied Physics Letters, vol. 124, no. 7, Feb. 2024, pp. 1–7. EBSCOhost, https://doi.org/10.1063/5.0180145.
APA
Liu, F., Xue, J., Yao, J., Wu, G., Li, Z., Liu, R., Guo, Z., Zhang, K., Zhang, J., & Hao, Y. (2024). Record peak current density of over 1500 kA/cm2 in highly scaled AlN/GaN double-barrier resonant tunneling diodes on free-standing GaN substrates. Applied Physics Letters, 124(7), 1–7. https://doi.org/10.1063/5.0180145
Chicago
Liu, Fang, JunShuai Xue, JiaJia Yao, GuanLin Wu, ZuMao Li, RenJie Liu, Zhuang Guo, Kai Zhang, JinCheng Zhang, and Yue Hao. 2024. “Record Peak Current Density of over 1500 KA/Cm2 in Highly Scaled AlN/GaN Double-Barrier Resonant Tunneling Diodes on Free-Standing GaN Substrates.” Applied Physics Letters 124 (7): 1–7. doi:10.1063/5.0180145.