Cite
Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network.
MLA
Zhao, Yage, et al. “Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network.” Micromachines, vol. 15, no. 2, Feb. 2024, p. 218. EBSCOhost, https://doi.org/10.3390/mi15020218.
APA
Zhao, Y., Xu, Z., Tang, H., Zhao, Y., Tang, P., Ding, R., Zhu, X., Zhang, D. W., & Yu, S. (2024). Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network. Micromachines, 15(2), 218. https://doi.org/10.3390/mi15020218
Chicago
Zhao, Yage, Zhongshan Xu, Huawei Tang, Yusi Zhao, Peishun Tang, Rongzheng Ding, Xiaona Zhu, David Wei Zhang, and Shaofeng Yu. 2024. “Compact Modeling of Advanced Gate-All-Around Nanosheet FETs Using Artificial Neural Network.” Micromachines 15 (2): 218. doi:10.3390/mi15020218.