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Inch‐Scale Freestanding Single‐Crystalline BiFeO3 Membranes for Multifunctional Flexible Electronics.

Authors :
Qiu, Ruibin
Peng, Bin
Zhang, Jiaxuan
Guo, Yunting
Liu, Haixia
Wang, Xianlei
Tang, Haowen
Dong, Guohua
Zhao, Yanan
Jiang, Zhuang‐De
Liu, Ming
Hu, Zhongqiang
Source :
Advanced Electronic Materials; Mar2024, Vol. 10 Issue 3, p1-9, 9p
Publication Year :
2024

Abstract

Flexible electronics strongly demand the integration of flexible and large‐scale multifunctional oxides. BiFeO3 is one of the most essential multifunctional oxides that could be used in memories, logics, sensors, and actuators. Recently, freestanding single‐crystalline BiFeO3 membranes exhibited superior elasticity and flexibility. However, fabrication and integration of large‐scale freestanding BiFeO3 membranes into flexible electronics remain elusive. In this study, inch‐scale freestanding single‐crystalline BiFeO3 membranes are fabricated with assistance from a water‐soluble sacrificial layer. To transfer flat and crack‐free membranes, all the existing methods are first followed but fail. Then the study introduces a temporary supporting Cu layer on the surface of the as‐grown SiTiO3/Sr3Al2O6/(SrRuO3/)BiFeO3 heterostructure and successfully obtains full and crack‐free 5 mm × 5 mm freestanding membranes on various substrates. The residual strain within the heterostructure releases gradually under the protection of the Cu layer. The freestanding BiFeO3 membranes are relatively uniform among different regions and exhibit good dielectric, ferroelectric, and ferromagnetic properties. Finally, flexible ferroelectric photovoltaic devices are patterned based on those BiFeO3 membranes, and they have open circuit voltage and short circuit current density up to −0.25 ± 0.03 V and 0.82 ± 0.09 µA cm−2, respectively. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
2199160X
Volume :
10
Issue :
3
Database :
Complementary Index
Journal :
Advanced Electronic Materials
Publication Type :
Academic Journal
Accession number :
175919457
Full Text :
https://doi.org/10.1002/aelm.202300670