Investigation of the Influence of Technological Factors on High-Voltage p0–n0 Junctions Based on GaAs.

A technology has been developed and an optimal solution has been found for obtaining p⁰-n⁰ junctions based on lightly doped GaAs layers, with high values of electrical parameters and specified thicknesses of the base layers for creating ultra-high-speed high-voltage pulsed three-electrode switches with a photoninjection mechanism for the transfer of no ne quorum charge carriers. The dependence of the switching stability relative to the control pulse of the created high-voltage photonic-injection switches in a wide current and frequency mode of their operation, its sensitivity to various external and internal influences of these parameters has been studied. Those on the thickness of the p⁰-layer, on the transfer coefficient &945;, on the breakdown voltage Utrial, high-voltage p⁰-n⁰ transition, on the thickness of the solution-melt, on the temperature of the onset of crystallization, as well as the dependence of the transfer coefficient on the thickness of the p⁰-layer. [ABSTRACT FROM AUTHOR]