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Behavior of exciton in direct−indirect band gap Al x Ga1 −x As crystal lattice quantum wells.
- Source :
- Journal of Semiconductors; Mar2024, Vol. 45 Issue 3, p1-7, 7p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 16744926
- Volume :
- 45
- Issue :
- 3
- Database :
- Complementary Index
- Journal :
- Journal of Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 176058832
- Full Text :
- https://doi.org/10.1088/1674-4926/45/3/032701