Accumulation and removal of Si impurities on β-Ga2O3 arising from ambient air exposure.

Here, we report that a source of Si impurities commonly observed on (010) β-Ga₂O₃ is from exposure of the surface to air. Moreover, we find that a 15 min hydrofluoric acid (HF) (49%) treatment reduces the Si density by approximately 1 order of magnitude on (010) β-Ga₂O₃ surfaces. This reduction in Si is critical for the elimination of the often observed parasitic conducting channel, which negatively affects transport properties and lateral transistor performance. After the HF treatment, the sample must be immediately put under vacuum, for the Si fully returns within 10 min of additional air exposure. Finally, we demonstrate that performing a 30 min HF (49%) treatment on the substrate before growth has no deleterious effect on the structure or on the epitaxy surface after subsequent Ga₂O₃ growth. [ABSTRACT FROM AUTHOR]