Memory Response of Photo-Thermo-Diffusive Elastic Medium Containing a Spherical Cavity with Nonlocal Effects.

Motivated by the expanding demand of semiconductors at miniature/nanoscales used in micro-electromechanical systems and nano-electromechanical systems, etc., authors solved the problem of coupled plasma, thermal, elastic, and diffusion waves due to photothermal transport processes within an infinite semiconductor medium containing a spherical cavity. To highlight the hereditary properties, thermal and diffusion processes are considered to be memory dependent. The investigation is carried out in the context of a generalized photothermo-elastic-diffusion model considering the spatial nonlocal effects of concentration, thermal, and strain fields, which augments the novelty of the present work. Initially, the medium is held quiescent. The boundary of the cavity is subjected to an exponentially decaying pulse, and carrier density is expressed in terms of recombination velocity. Laplace transformation, along with the numerical inversion technique using the physical data of silicon, is applied to solve the governing equations and constitutive relations of the problem. The distribution of dimensionless quantities such as temperature, radial stress, and carrier density is represented graphically. [ABSTRACT FROM AUTHOR]