Stresses in Selectively Oxidized GaAs/(AlGa)xOy Structures.

Authors :: Blokhin, S. A.
Smirnov, A. N.
Sakharov, A. V.
Gladyshev, A. G.
Kryzhanovskaya, N. V.
Maleev, N. A.
Zhukov, A. E.
Semenova, E. S.
Bedarev, D. A.
Nikitina, E. V.
Kulagina, M. M.
Maksimov, M. V.
Ledentsov, N. N.
Ustinov, V. M.
Source :: Semiconductors; Jul2005, Vol. 39 Issue 7, p748-753, 6p
Publication Year :: 2005
Abstract: Raman scattering spectroscopy is used to study the process of selective oxidation of Al<subscript>0.97</subscript>Ga<subscript>0.03</subscript>As layers. Stresses arising in GaAs/(AlGa)<subscript>x</subscript>O<subscript>y</subscript> layers as a result of selective oxidation under different conditions are determined. The effects of local heating of the samples with laser radiation during measurements of the Raman signals, photoresist hardening resulting from the oxidation, and overoxidation are analyzed. The instrumentation and method of selective oxidation are optimized; as a result, arrays of vertical-cavity surface-emitting lasers are fabricated. The active region of these lasers is based on two InGaAs quantum wells with top oxidized and bottom semiconductor distributed Bragg reflectors. © 2005 Pleiades Publishing, Inc. [ABSTRACT FROM AUTHOR]