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GeSn-on-GaAs with photoconductive carrier lifetime >400 ns: role of substrate orientation and atomistic simulation.
- Source :
- Nanoscale; 4/14/2024, Vol. 16 Issue 14, p7225-7236, 12p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 20403364
- Volume :
- 16
- Issue :
- 14
- Database :
- Complementary Index
- Journal :
- Nanoscale
- Publication Type :
- Academic Journal
- Accession number :
- 176456925
- Full Text :
- https://doi.org/10.1039/d3nr05904a