Back to Search
Start Over
Layer-number parity-dependent oscillatory spin transport in β-Ga2O3 magnetic tunnel junctions.
- Source :
- Applied Physics Letters; 4/8/2024, Vol. 124 Issue 15, p1-8, 8p
- Publication Year :
- 2024
-
Abstract
- Spintronics devices have been a research hotspot due to their rich theoretical and application value. The widebandgap semiconductor β-Ga<subscript>2</subscript>O<subscript>3</subscript> has excellent application potential in spintronics due to the controllability of its electron behavior via ultraviolet light. This paper employs first-principles calculations and the Wenzel–Kramers–Brillouin (WKB) approximation to comprehensively investigate spin transport based on magnetic tunnel junctions (MTJs) comprising β-Ga<subscript>2</subscript>O<subscript>3</subscript> nanosheets. The magnetic moment of the ferromagnetic layer in β-Ga<subscript>2</subscript>O<subscript>3</subscript> MTJs is found to be positively correlated with tunnel magnetoresistance (TMR). Interestingly, layer-number parity-dependent oscillation of TMR in β-Ga<subscript>2</subscript>O<subscript>3</subscript> MTJs is observed, which is explained by the non-equilibrium Green function and the WKB approximation. TMR reaches a maximum of 1077% at five layers, and bias-dependent stability is observed in the monolayer model under biases of 0–20 mV. This study not only expands the application potential of β-Ga<subscript>2</subscript>O<subscript>3</subscript> and predicts its superiority in spintronics but also enriches the related condensed matter theory. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 124
- Issue :
- 15
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 176579141
- Full Text :
- https://doi.org/10.1063/5.0189510