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Improvement of Ga2O3 vertical Schottky barrier diode by constructing NiO/Ga2O3 heterojunction.
- Source :
- Journal of Semiconductors; Apr2024, Vol. 45 Issue 4, p1-6, 6p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 16744926
- Volume :
- 45
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Semiconductors
- Publication Type :
- Academic Journal
- Accession number :
- 176929629
- Full Text :
- https://doi.org/10.1088/1674-4926/45/4/042503