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Controlled exfoliation of wafer-scale single-crystalline AlN film on MOCVD-grown layered h-BN.
- Source :
- Applied Physics Letters; 4/29/2024, Vol. 124 Issue 18, p1-7, 7p
- Publication Year :
- 2024
-
Abstract
- In this work, we present a stress-free AlN film with improved crystal quality assisted by h-BN and demonstrate the mechanical exfoliation of wafer-scale single-crystal AlN freestanding membrane and reveal the controllable exfoliation mechanism of AlN. Uniform and continuous wafer-scale h-BN is directly grown on c-plane sapphire using a flow modulation epitaxy mode by metal-organic chemical vapor deposition. The nucleation and evolution processes of quasi-van der Waals epitaxy (QvdWE) of AlN on h-BN are revealed. It is found that O<subscript>2</subscript>-plasma-treated h-BN can effectively promote the nucleation islands of AlN and contribute to the release of biaxial stress and the reduction of dislocation density in the epilayers. Eventually, the QvdWE growth of a stress-free AlN film (0.08 GPa) is achieved, and wafer-scale mechanical exfoliation of the AlN membrane has been realized. This work provides an effective strategy for the quality improvement of III-nitride films and paves the way for the vertical structure and flexible deep-ultraviolet optoelectronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 124
- Issue :
- 18
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 177039172
- Full Text :
- https://doi.org/10.1063/5.0211872