Back to Search
Start Over
Selenium-alloyed tellurium oxide for amorphous p-channel transistors.
- Source :
- Nature; May2024, Vol. 629 Issue 8013, p798-802, 5p
- Publication Year :
- 2024
-
Abstract
- Compared to polycrystalline semiconductors, amorphous semiconductors offer inherent cost-effective, simple and uniform manufacturing. Traditional amorphous hydrogenated Si falls short in electrical properties, necessitating the exploration of new materials. The creation of high-mobility amorphous n-type metal oxides, such as a-InGaZnO (ref. 1), and their integration into thin-film transistors (TFTs) have propelled advancements in modern large-area electronics and new-generation displays2–8. However, finding comparable p-type counterparts poses notable challenges, impeding the progress of complementary metal–oxide–semiconductor technology and integrated circuits9–11. Here we introduce a pioneering design strategy for amorphous p-type semiconductors, incorporating high-mobility tellurium within an amorphous tellurium suboxide matrix, and demonstrate its use in high-performance, stable p-channel TFTs and complementary circuits. Theoretical analysis unveils a delocalized valence band from tellurium 5p bands with shallow acceptor states, enabling excess hole doping and transport. Selenium alloying suppresses hole concentrations and facilitates the p-orbital connectivity, realizing high-performance p-channel TFTs with an average field-effect hole mobility of around 15 cm<superscript>2</superscript> V<superscript>−1</superscript> s<superscript>−1</superscript> and on/off current ratios of 10<superscript>6</superscript>–10<superscript>7</superscript>, along with wafer-scale uniformity and long-term stabilities under bias stress and ambient ageing. This study represents a crucial stride towards establishing commercially viable amorphous p-channel TFT technology and complementary electronics in a low-cost and industry-compatible manner.A pioneering design strategy for amorphous p-type semiconductors can be used in high-performance, stable p-channel TFTs and complementary circuits, which may establish viable amorphous p-channel TFT technology and large-area complementary electronics in a low-cost manner. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00280836
- Volume :
- 629
- Issue :
- 8013
- Database :
- Complementary Index
- Journal :
- Nature
- Publication Type :
- Academic Journal
- Accession number :
- 177447422
- Full Text :
- https://doi.org/10.1038/s41586-024-07360-w