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Influence of La2O3 on Mechanical Properties and Radiation-Shielding Performance of Magnesium Beryllia-Borosilicate Glass System.

Authors :
Shaaban, Kh. S.
Alsafi, Khalid
Aloraini, Dalal Abdullah
Al-Saleh, Wafa M.
Almutairi, Haifa M.
Assem, E. E.
Source :
SILICON (1876990X); May2024, Vol. 16 Issue 7, p2899-2911, 13p
Publication Year :
2024

Abstract

The composition of the pentagonal glass system, which is composed of 57B<subscript>2</subscript>O<subscript>3</subscript>-16SiO<subscript>2</subscript>-11BeO- (16-x) MgO-xLa<subscript>2</subscript>O<subscript>3</subscript>, x = (0 ≤ x ≤ 16 mol %), has been synthesized by the melt quench process. XRD diffractograms' wide haloes testified to the materials' amorphous state. It was discovered that, density increased in response to La<subscript>2</subscript>O<subscript>3</subscript> concentration, whereas molar volume decreased. Additionally, the ranges of longitudinal and shear velocities are 4730 to 5085 m/s and 2685–2895 m/s, respectively. The elastic moduli for longitudinal range between 71.9–154.3 GPa, shear range between 23.2–50 GPa, bulk range between 23.2–50 GPa, and Young's range between 58.5–126 GPa, respectively. The study employed Phy-X/PSD code to examine the radiation attenuation behaviour of magnesium beryllia-borosilicate, also known as (BMBSLa) glasses, at varying concentrations of La<subscript>2</subscript>O<subscript>3</subscript>. We examined the relationship among the half value layer (HVL) and density. HVL values at a density of 3.213 g/cm<superscript>3</superscript> range from 0.0087 to 11.746 cm and at density of 5.967 g/cm<superscript>3</superscript> range from 0.02 to 5.727 cm at (0.015–15 MeV). Tenth value layer (TVL) and mean free path (MFP) are evaluation and comparison between HVL, TVL and MFP for the same glass at specific energy were also conducted. The glass samples under investigation are excellent candidates for usage in the field of shielding radiation because they are more transparent. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1876990X
Volume :
16
Issue :
7
Database :
Complementary Index
Journal :
SILICON (1876990X)
Publication Type :
Academic Journal
Accession number :
177462736
Full Text :
https://doi.org/10.1007/s12633-024-02897-x