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Design and Growth of Low Resistivity P-Type AlGaN Superlattice Structure.
- Source :
- Micromachines; May2024, Vol. 15 Issue 5, p596, 12p
- Publication Year :
- 2024
-
Abstract
- This work investigated the impact of periodic thickness and doping region on the doping efficiency of the P-type AlGaN superlattice. In this paper, the band structure of the simulated superlattice was analyzed. The superlattice structure of Al<subscript>0.1</subscript>Ga<subscript>0.3</subscript>N/Al<subscript>0.4</subscript>Ga<subscript>0.6</subscript>N, and the AlGaN buffer on the sapphire substrate, achieved a resistivity of ~3.3 Ω·cm. The results indicate that barrier doping and low periodic thickness offer significant advantages in introducing a reduction of the resistivity of P-type AlGaN superlattice structures. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 2072666X
- Volume :
- 15
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Micromachines
- Publication Type :
- Academic Journal
- Accession number :
- 177491436
- Full Text :
- https://doi.org/10.3390/mi15050596