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The Epitaxial Growth of Ge and GeSn Semiconductor Thin Films on C-Plane Sapphire.
- Source :
- Crystals (2073-4352); May2024, Vol. 14 Issue 5, p414, 14p
- Publication Year :
- 2024
-
Abstract
- Ge<subscript>1−x</subscript>Sn<subscript>x</subscript> growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge<subscript>1−x</subscript>Sn<subscript>x</subscript> on Ge/GaAs/AlAs/sapphire were investigated by in situ and ex situ characterization techniques to ascertain the surface morphology, crystal structure, and quality. The growth mode of Ge on GaAs was predominantly two-dimensional (2D), which signifies a layer-by-layer deposition, contributing to enhanced crystal quality in the Ge/GaAs system. The growth of Ge<subscript>1−x</subscript>Sn<subscript>x</subscript> with 10% Sn on a graded profile for 30 min shows uniform composition and a strong peak on the reciprocal space map (RSM). On the other hand, the partially relaxed growth of the alloy on RSM was established. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20734352
- Volume :
- 14
- Issue :
- 5
- Database :
- Complementary Index
- Journal :
- Crystals (2073-4352)
- Publication Type :
- Academic Journal
- Accession number :
- 177493074
- Full Text :
- https://doi.org/10.3390/cryst14050414