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Crystallization dynamics probed by transient resistance in phase change memory cells.
- Source :
- Journal of Applied Physics; 5/28/2024, Vol. 135 Issue 20, p1-7, 7p
- Publication Year :
- 2024
-
Abstract
- Crystallization (set) time is a key bottleneck to achieve high-speed programming in phase change memory (PCM). Overcoming this limitation requires a deeper understanding of the solidification processes within nanoscale device configuration. This study explores crystallization dynamics in Ge<subscript>2</subscript>Sb<subscript>2</subscript>Te<subscript>5</subscript> by measuring the transient resistance and power during the set process in confined PCM cells with nanosecond resolution. The transient resistance probes the phase, while the power can be used to evaluate temperature, thus uncovering details of the phase change dynamics. Our findings reveal a notable trend indicating that solidification from the melt results in faster crystallization compared with annealing the glassy state. Moreover, we observed notable differences in the solidification dynamics during set (crystallization) and reset (amorphization) pulses. Our nanosecond transient measurement methodology proves valuable in revealing crucial aspects of PCM crystallization dynamics, holding the potential to enable higher-speed programming. [ABSTRACT FROM AUTHOR]
- Subjects :
- PHASE change memory
TRANSIENTS (Dynamics)
CRYSTALLIZATION
Subjects
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 135
- Issue :
- 20
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 177610045
- Full Text :
- https://doi.org/10.1063/5.0202152