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The Reliability Impact of Bi Doping on the HfO2 Charge-Trapping Layer: A First-Principles Study.
- Source :
- Journal of Electronic Materials; Jul2024, Vol. 53 Issue 7, p3756-3767, 12p
- Publication Year :
- 2024
-
Abstract
- Hafnia has emerged as a promising material for charge-trapping memory. However, enhancing its trapping performance remains a significant research challenge. In this work, we investigate the influence of Bi impurities on the reliability of HfO<subscript>2</subscript>-based charge-trapping memory devices using first-principles calculations. By examining the impact of Bi impurities on the formation of oxygen vacancies (V<subscript>O</subscript>), we obtained the lowest-energy Bi-V<subscript>O3</subscript> defect model. Through an exploration of the microstructure, electronic structure, and Bader charge distribution of the Bi-V<subscript>O3</subscript> defect system, we compare its device performance with the Al-V<subscript>O3</subscript> defect system. Our findings demonstrate that the Bi-V<subscript>O3</subscript> defect system exhibits superior electronic retention ability compared to the Al-V<subscript>O3</subscript> defect system. This suggests that introducing Bi impurities into HfO<subscript>2</subscript> can enhance the reliability of memory devices and presents a promising dopant solution for improving memory performance. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRONIC structure
DOPING agents (Chemistry)
HAFNIUM oxide
Subjects
Details
- Language :
- English
- ISSN :
- 03615235
- Volume :
- 53
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Journal of Electronic Materials
- Publication Type :
- Academic Journal
- Accession number :
- 177797276
- Full Text :
- https://doi.org/10.1007/s11664-024-11066-0