High breakdown voltage of 1.3 kV and low turn-on voltage of 0.48 V β-Ga2O3 heterojunction barrier Schottky diode with tungsten Schottky contact.

β-Ga₂O₃ power diodes were expected to possess low turn-on voltage (V _on), low reverse leakage (J _R), and high blocking capability for low power losses. In this work, a low V _on (0.48 V) β-Ga₂O₃ heterojunction barrier Schottky diode (HJBS) with tungsten Schottky contact was achieved. Benefitting from the lateral depletion of p⁺-NiO to suppress J _R originating from the low Schottky barrier, the blocking capability of β-Ga₂O₃ HJBS was enhanced. The spacing width of p⁺-NiO was systematically studied to reveal its modulation effect on forward and reverse characteristics. This work provides a promising strategy for improving rectifier efficiency of β-Ga₂O₃ diodes. [ABSTRACT FROM AUTHOR]