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Performance improvement of HfO2-based ferroelectric with 3D cylindrical capacitor stress optimization.
- Source :
- Journal of Applied Physics; 6/21/2024, Vol. 135 Issue 23, p1-6, 6p
- Publication Year :
- 2024
-
Abstract
- To meet commercialization requirements, the distributions of materials in hafnium-based ferroelectric devices—including their phase and orientation—need to be controlled. This article presents a method for improving the ferroelectric phase ratio and orientation by adjusting the stress distribution of the annealing structure in a three-dimensional capacitor. In such a structure, stress can be applied in three directions: tangential, axial, and radial; there are, thus, more ways to regulate stress in three-dimensional structures than in two-dimensional structures. This work sought to clarify the role of the stress direction on the proportions and orientations of ferroelectric phases. The results of stress simulations show that a structure with an internal TiN electrode, but no filling provides greater axial and tangential stresses in the hafnium-oxide layer. In comparison with the case of the hole being filled with tungsten, the proportion of the O phase is increased by approximately 20%, and in experiments, the projection of the polarization direction onto the normal was found to be increased by 5%. Axial and tangential stresses are regarded to be beneficial for the formation of the O phase and for improving the orientation of the polarization direction. This work provides a theoretical basis and guidance for the three-dimensional integration of hafnium-based ferroelectric materials. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00218979
- Volume :
- 135
- Issue :
- 23
- Database :
- Complementary Index
- Journal :
- Journal of Applied Physics
- Publication Type :
- Academic Journal
- Accession number :
- 178024027
- Full Text :
- https://doi.org/10.1063/5.0205852