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A Comparative Study on the Substitution of Nonmagnetic Ion T3+ (T = Al, Sc and Y; 0 ≤ × ≤ 0.2) on the Co2Sn1−xTxO4 Spinel Oxides to Investigate the Magnetic Characteristics

Authors :
Ali, Wajahat
Xinghan, Chen
Ashtar, Maalik
Hongxia, Yin
Razaq, Abdul
Younis, Muhammad
Zhilong, Zheng
Songliu, Yuan
Source :
Journal of Electronic Materials; Jun2024, Vol. 53 Issue 6, p2861-2873, 13p
Publication Year :
2024

Abstract

Co<subscript>2</subscript>Sn<subscript>1−x</subscript>T<subscript>x</subscript>O<subscript>4</subscript> (T = Al, Sc, and Y; 0 ≤ x ≤ 0.2) magnetic spinel oxides have been synthesized through solid-state reaction. The XRD pattern displays a single-phase cubic structure with space group Fd3m. Moreover, magnetic susceptibility results show that substituting trivalent non-magnetic ions improves the para-ferrimagnetic transition temperature, T<subscript>C</subscript>. Magnetic susceptibility results of direct current (dc) and alternating current (ac) showed that the T<superscript>3+</superscript> substitution increased the freezing temperature of the spin-glass state, and was also beneficial to the growth of the spin-glass phase. The apparent magnetic exchange bias effect at low temperatures (T < 20 K) was realized in the Co<subscript>2</subscript>Sn<subscript>1−x</subscript>T<subscript>x</subscript>O<subscript>4</subscript> samples using the pinning effect in the spin-glass phase. Due to the magnetic exchange bias effect, the magnetism of the system dramatically increased at low temperatures. Thermal exchange bias results show that the coercivity field (H<subscript>C</subscript>) at 10 K increased from 0 for x = 0 samples to ~ 2.1, 1.3, and 2.9 kOe for Al-, Sc-, and Y-doped samples, respectively. It can optimize magnetic materials and architectures, improving performance and practicality in magnetic data storage, magnetic sensors, spintronics, and magnetic nanoparticles. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03615235
Volume :
53
Issue :
6
Database :
Complementary Index
Journal :
Journal of Electronic Materials
Publication Type :
Academic Journal
Accession number :
178046856
Full Text :
https://doi.org/10.1007/s11664-024-10998-x