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Preparation and properties of CdS0.25Se0.75/N-GQDs/3D rGO ternary composites.

Authors :: Liu, Kaiwei
Du, Beibei
Zhao, Liyang
Lei, Yun
Wang, Yongqin
Li, Can
Luo, Linhui
Deng, Yifan
Tang, Zehui
Chen, Jiong
Source :: Journal of Materials Science: Materials in Electronics; Jun2024, Vol. 35 Issue 18, p1-12, 12p
Publication Year :: 2024
Abstract: In this paper, CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>, N-GQDs and 3D rGO are combined to obtain a hexagonal ternary CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>/N-GQDs/3D rGO, which was employed to improve the photoelectric performance of alloy semiconductor CdSSe. The steady-state photocurrent density of CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>/N-GQDs/3D rGO reaches 9.4 × 10<superscript>−5</superscript> A/cm<superscript>2</superscript>, which is 30 times higher than that of CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>/N-GQDs and 300 times higher than that of pure CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript> semiconductors. The electrochemical impedance spectroscopy (EIS) results show that the interface charge transfer resistance of CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>/N-GQDs/3D rGO is lower than that of CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>/N-GQDs and CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>. From the calculated result of Mott–Schottky tests, the carrier density of CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>/N-GQDs/3D rGO reaches 3.99 × 10<superscript>20</superscript> cm<superscript>−3</superscript>, which is superior to that of CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript> (1.85 × 10<superscript>20</superscript> cm<superscript>−3</superscript>) and CdS<subscript>0.25</subscript>Se<subscript>0.75</subscript>/N-GQDs (3.18 × 10<superscript>20</superscript> cm<superscript>−3</superscript>). Among them, N-GQDs serve as photosensitizers to improve the light absorption and 3D rGO aerogels serve as electron-transfer substrates for charge separation and transport instead of recombination of electron–hole pairs. [ABSTRACT FROM AUTHOR]