P‐11.10: Design and performance simulation study of optoelectronic co‐modulated Full GaN LET.

Modern society is the development stage of informationization and intelligence, and display is the key factor to realize information exchange and intelligence. Among the many current displays, Micro light‐emitting diode (µLED) display is used as a disruptive next‐generation display. Based on the same GaN material and process platform, we propose the vertical integrated device, where Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) based µLED and GaN bipolar junction transistors (BJT) monolithically integrated vertically on a single GaN chip. The ultraviolet optoelectronic characteristics of µLED on BJT (LET) devices were simulated by using Silvaco TCAD software. By optimizing the size and concentration of the epitaxy layer, the optimized integrated device is obtained with high current gain and strong response to UV light. The LET can be used as both receiver and emitter, which is regulated by changing the light input power or base voltage. This device can be driven by the base voltage and UV light alone, which is a multifunctional integrated device for light emitting, detecting, sensing, driving and regulating. [ABSTRACT FROM AUTHOR]