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Synthesis of α-Bi/SrTiO3 heterostructure through the Eu-induced reduction of Bi2O2Se/SrTiO3.
- Source :
- Applied Physics Letters; 6/24/2024, Vol. 124 Issue 26, p1-7, 7p
- Publication Year :
- 2024
-
Abstract
- Thin Bi films, especially noncentrosymmetric α-phase Bi films (α-Bi), have attracted considerable attention in recent years due to their intriguing physical properties such as ferroelectricity, nonlinear optical response, and coherent spin transport. However, the current experimental preparation of α-Bi films still presents substantial challenges, resulting in only isolated α-Bi islands being achieved. In this study, α-Bi/SrTiO<subscript>3</subscript> (α-Bi/STO) was synthesized from a Bi<subscript>2</subscript>O<subscript>2</subscript>Se/STO (BOS/STO) heterostructure by depositing a Eu layer and reducing a BOS film. The so-formed α-Bi/STO interface features metallic conductivity with electron mobility of 7.7 × 10<superscript>4</superscript> cm<superscript>2</superscript>/V s and ultralow resistivity of 1 nΩ cm at 2 K, as well as high residual resistance ratios R<subscript>300 K</subscript>/R<subscript>2 K</subscript> up to 2353. Furthermore, we observed a complex weak antilocalization–weak localization–weak antilocalization crossover with increasing magnetic field at temperatures below 10 K. Our work presents the synthesis of α-Bi films, which could potentially serve as a valuable platform for experimental validation of diverse theoretical predictions associated with α-Bi heterostructures. Furthermore, this special synthesis method provides valuable insights into the preparation of other metastable films. [ABSTRACT FROM AUTHOR]
- Subjects :
- ELECTRON mobility
THIN films
BOS
MAGNETIC fields
FERROELECTRICITY
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 124
- Issue :
- 26
- Database :
- Complementary Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 178147304
- Full Text :
- https://doi.org/10.1063/5.0218075