Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers.

MLA

Pei, Yicheng, et al. “Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers.” Micromachines, vol. 15, no. 6, June 2024, p. 665. EBSCOhost, https://doi.org/10.3390/mi15060665.

APA

Pei, Y., Yuan, W., Li, Y., Guo, N., Zhang, X., & Liu, X. (2024). Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers. Micromachines, 15(6), 665. https://doi.org/10.3390/mi15060665

Chicago

Pei, Yicheng, Weilong Yuan, Yunkai Li, Ning Guo, Xiuhai Zhang, and Xingfang Liu. 2024. “Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers.” Micromachines 15 (6): 665. doi:10.3390/mi15060665.