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High growth rate metal organic chemical vapor deposition grown Ga2O3 (010) Schottky diodes.
- Source :
- Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films; Jul2024, Vol. 42 Issue 4, p1-8, 8p
- Publication Year :
- 2024
-
Abstract
- We report on the growth of Si-doped homoepitaxial β-Ga<subscript>2</subscript>O<subscript>3</subscript> thin films on (010) Ga<subscript>2</subscript>O<subscript>3</subscript> substrates via metal-organic chemical vapor deposition (MOCVD) utilizing triethylgallium (TEGa) and trimethylgallium (TMGa) precursors. The epitaxial growth achieved an impressive 9.5 μm thickness at 3 μm/h using TMGa, a significant advance in material growth for electronic device fabrication. This paper systematically studies the Schottky barrier diodes fabricated on the three MOCVD-grown films, each exhibiting variations in the epilayer thickness, doping levels, and growth rates. The diode from the 2 μm thick Ga<subscript>2</subscript>O<subscript>3</subscript> epilayer with TEGa precursor demonstrates promising forward current densities, the lowest specific on-resistance, and the lowest ideality factor, endorsing TEGa's potential for MOCVD growth. Conversely, the diode from the 9.5 μm thick Ga<subscript>2</subscript>O<subscript>3</subscript> layer with TMGa precursor exhibits excellent characteristics in terms of lowest leakage current, highest on-off ratio, and highest reverse breakdown voltage of −510 V without any electric field management, emphasizing TMGa's suitability for achieving high growth rates in Ga<subscript>2</subscript>O<subscript>3</subscript> epilayers for vertical power electronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07342101
- Volume :
- 42
- Issue :
- 4
- Database :
- Complementary Index
- Journal :
- Journal of Vacuum Science & Technology: Part A-Vacuums, Surfaces & Films
- Publication Type :
- Academic Journal
- Accession number :
- 178228053
- Full Text :
- https://doi.org/10.1116/6.0003533