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Current-collapse suppression and leakage-current decrease in AlGaN/GaN HEMT by sputter-TaN gate-dielectric layer.
- Source :
- Semiconductor Technology; Jul2024, Vol. 45 Issue 7, p1-6, 6p
- Publication Year :
- 2024
Details
- Language :
- English
- ISSN :
- 1003353X
- Volume :
- 45
- Issue :
- 7
- Database :
- Complementary Index
- Journal :
- Semiconductor Technology
- Publication Type :
- Academic Journal
- Accession number :
- 178259640
- Full Text :
- https://doi.org/10.1088/1674-4926/24010025