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High Efficiency O‐band Preamplified Receiver Integrated with Semiconductor Optical Amplifier and Uni‐travelling Carrier Photodiode for Passive Optical Network.

Authors :
Gnanamani, Risab
Bertin, Hervé
Besancon, Claire
Mekhazni, Karim
Caillaud, Christophe
Deng, Marina
Mukherjee, Chhandak
Maneux, Cristell
Source :
Physica Status Solidi. A: Applications & Materials Science; Jul2024, Vol. 221 Issue 13, p1-8, 8p
Publication Year :
2024

Abstract

With the continuous increase in data traffic and enormous consumption of data in terms of video on demand services and cloud computing, there is an increasing demand for high speed and high sensitivity short reach receivers for passive optical networks (PON) access network which are point to multi‐point networks. Avalanche photodiodes (APD) are the standard receivers in PON networks due to their high sensitivity and low cost. However, it is currently not clear if they can provide high bandwidth above 40 GHz with good performance (gain, noise, etc.). Furthermore, standard PIN photodiodes do not provide sufficient sensitivity for PON networks. Therefore, in this article a SOA‐UTC receiver is proposed, which is a photonic integrated circuit (PIC) comprising a semiconductor optical amplifier (SOA) for optical preamplification and a high‐speed uni‐travelling‐carrier (UTC) photodiode for opto‐electronic conversion. A very high responsivity of 140 A W−1 is demonstrated, with a polarization dependent loss (PDL) around 1 dB and a 3 dB bandwidth of 48 GHz, which is very promising for future PON network with 50 Gbit s−1 capacity and above. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
18626300
Volume :
221
Issue :
13
Database :
Complementary Index
Journal :
Physica Status Solidi. A: Applications & Materials Science
Publication Type :
Academic Journal
Accession number :
178355345
Full Text :
https://doi.org/10.1002/pssa.202300648