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Microwave dielectric properties and crystal structure of a new low loss BaCa13Mg2(SiO4)8 ceramics.

Authors :
Li, Yingxiang
Liu, Wei
Pang, Xianying
Peng, Sen
Oad, Ammar
Liang, Deyin
Zhang, Xing
Tang, Bin
Fang, Zixuan
Shi, Zitao
Chen, Jingjing
He, Chuansheng
Hou, Zegui
Sun, Yuxin
Source :
Journal of Materials Science: Materials in Electronics; Jul2024, Vol. 35 Issue 19, p1-9, 9p
Publication Year :
2024

Abstract

This investigation explores the microwave dielectric characteristics of BaCa<subscript>13</subscript>Mg<subscript>2</subscript>(SiO<subscript>4</subscript>)<subscript>8</subscript> ceramics, synthesized through conventional solid-state techniques. Via X-ray diffraction analysis and comprehensive data refinement across various temperatures, we unequivocally determined the orthorhombic crystal structure of the BaCa<subscript>13</subscript>Mg<subscript>2</subscript>(SiO<subscript>4</subscript>)<subscript>8</subscript> ceramics. The measured lattice parameters at a sintering temperature of 1345 °C are a = 18.51543 Å, b = 6.77482 Å, and c = 10.95537 Å, with a corresponding unit volume of V = 1374.226706 Å<superscript>3</superscript>. The microstructure of the ceramic grains was studied in detail by scanning electron microscopy (SEM), and it was found that the optimum relative density was 97.2%. The study further explored the effects of porosity, packing fraction, relative density, and the impact of Si–O bond valence (V<subscript>Si-O</subscript>) on the microwave dielectric characteristics of BaCa<subscript>13</subscript>Mg<subscript>2</subscript>(SiO<subscript>4</subscript>)<subscript>8</subscript> ceramics. Remarkably, the BaCa<subscript>13</subscript>Mg<subscript>2</subscript>(SiO<subscript>4</subscript>)<subscript>8</subscript> ceramics exhibited exceptional performance metrics (ε<subscript>r</subscript> = 11.53, Q × f = 15,231 GHz (f = 10.6 GHz), τ<subscript>f</subscript> = − 27.3 ppm/°C) at 1345 °C, establishing it as a promising candidate for microwave applications. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
35
Issue :
19
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
178495990
Full Text :
https://doi.org/10.1007/s10854-024-13060-y