Back to Search
Start Over
Microwave dielectric properties and crystal structure of a new low loss BaCa13Mg2(SiO4)8 ceramics.
- Source :
- Journal of Materials Science: Materials in Electronics; Jul2024, Vol. 35 Issue 19, p1-9, 9p
- Publication Year :
- 2024
-
Abstract
- This investigation explores the microwave dielectric characteristics of BaCa<subscript>13</subscript>Mg<subscript>2</subscript>(SiO<subscript>4</subscript>)<subscript>8</subscript> ceramics, synthesized through conventional solid-state techniques. Via X-ray diffraction analysis and comprehensive data refinement across various temperatures, we unequivocally determined the orthorhombic crystal structure of the BaCa<subscript>13</subscript>Mg<subscript>2</subscript>(SiO<subscript>4</subscript>)<subscript>8</subscript> ceramics. The measured lattice parameters at a sintering temperature of 1345 °C are a = 18.51543 Å, b = 6.77482 Å, and c = 10.95537 Å, with a corresponding unit volume of V = 1374.226706 Å<superscript>3</superscript>. The microstructure of the ceramic grains was studied in detail by scanning electron microscopy (SEM), and it was found that the optimum relative density was 97.2%. The study further explored the effects of porosity, packing fraction, relative density, and the impact of Si–O bond valence (V<subscript>Si-O</subscript>) on the microwave dielectric characteristics of BaCa<subscript>13</subscript>Mg<subscript>2</subscript>(SiO<subscript>4</subscript>)<subscript>8</subscript> ceramics. Remarkably, the BaCa<subscript>13</subscript>Mg<subscript>2</subscript>(SiO<subscript>4</subscript>)<subscript>8</subscript> ceramics exhibited exceptional performance metrics (ε<subscript>r</subscript> = 11.53, Q × f = 15,231 GHz (f = 10.6 GHz), τ<subscript>f</subscript> = − 27.3 ppm/°C) at 1345 °C, establishing it as a promising candidate for microwave applications. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 35
- Issue :
- 19
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 178495990
- Full Text :
- https://doi.org/10.1007/s10854-024-13060-y