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Temperature effects on Cadmium Selenide semiconductor-sensitized solar cells with SnO2 deposition as electron transport layer.

Authors :
Shinde, Abhijeet
Hingane, Dattatray
Supekar, Abhijit
Hande, Vinod
Patil, R. S.
Source :
Journal of Materials Science: Materials in Electronics; Jul2024, Vol. 35 Issue 19, p1-11, 11p
Publication Year :
2024

Abstract

This research investigates the influence of temperature on the performance of Cadmium Selenium (CdSe) semiconductor-sensitized solar cells (SSSCs) with tin oxide (SnO<subscript>2</subscript>) deposition. CdSe thin films were synthesized at different temperatures (room temperature, 55 and 70 °C) and characterized for their optical and structural properties. The results reveal temperature-dependent variations in the bandgap energy and crystal structure of CdSe, with higher temperatures leading to a red shift in absorption spectra and increased crystallinity. The CdSe-coated SnO<subscript>2</subscript> films showed enhanced nanoparticle density at higher bath temperatures, indicating improved particle binding and aggregation. Moreover, the elemental analysis confirmed the successful loading of CdSe onto SnO<subscript>2</subscript> substrates without impurities. Solar cells constructed with these materials exhibited temperature-dependent efficiency, with maximum efficiency achieved at room temperature due to optimal bandgap characteristics and reduced recombination rates. The solar cell with the optimal SnO<subscript>2</subscript>:(FTO)/SnO<subscript>2</subscript>/CdSe/CuS nanostructure array electrode produced a short-circuit current density of 4.155 mA/cm<superscript>2</superscript> and a power conversion efficiency of 0.26% when exposed to one sun's rays. These findings suggest that temperature control during CdSe synthesis plays a crucial role in optimizing the performance of SSSCs, highlighting the importance of understanding temperature effects in semiconductor-based solar cell technologies. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
35
Issue :
19
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
178495994
Full Text :
https://doi.org/10.1007/s10854-024-13065-7