P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane.

MLA

Yu, Dongliang, et al. “P‐12: Improve the Reliability of A‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane.” SID Symposium Digest of Technical Papers, vol. 55, no. 1, June 2024, pp. 1407–09. EBSCOhost, https://doi.org/10.1002/sdtp.17811.

APA

Yu, D., Shen, Y., Wan, Y., Fan, W., & Zhang, W. (2024). P‐12: Improve the Reliability of a‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane. SID Symposium Digest of Technical Papers, 55(1), 1407–1409. https://doi.org/10.1002/sdtp.17811

Chicago

Yu, Dongliang, Ying Shen, Yunhai Wan, Wenzhi Fan, and Weibin Zhang. 2024. “P‐12: Improve the Reliability of A‐IGZO TFT through Optimizing the Threshold Voltage and Channel Thickness in AMOLED Hybrid Backplane.” SID Symposium Digest of Technical Papers 55 (1): 1407–9. doi:10.1002/sdtp.17811.