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The Fe-Incorporation Effects on the Structural Evolution of SiOC Ceramics.

The Fe-Incorporation Effects on the Structural Evolution of SiOC Ceramics.

Authors :
Wang, Jianfei
Zhang, Hui
Liu, Xiao
Xia, Kedong
Source :
SILICON (1876990X); Jul2024, Vol. 16 Issue 11, p4787-4796, 10p
Publication Year :
2024

Abstract

Fe-modified SiOC ceramic microspheres with different Fe/Si ratio were synthesized by solvothermal method with vinyltriethoxysilane and ferrous acetylacetonate as precursors. Effects of Fe/Si molar ratio and pyrolysis temperature on structure of SiOC ceramics were investigated. The carbothermal reduction results in the transformation of Fe<subscript>2</subscript>O<subscript>3</subscript> into Fe<subscript>3</subscript>O<subscript>4</subscript> as elevation of temperature from 600 <superscript>o</superscript>C to 800 <superscript>o</superscript>C, and Fe and Fe<subscript>3</subscript>C are formed with further increase the temperature to 1000 <superscript>o</superscript>C. Fe reacts firstly with free carbon (C<subscript>free</subscript>) to form Fe<subscript>3</subscript>C, and which preferentially reacts with SiC to form Fe<subscript>3</subscript>Si as the Fe/Si ratio is below (0.1) Only Fe<subscript>3</subscript>C phase retains with the Fe/Si ratio increases to (0.2) The transformation from Fe<subscript>3</subscript>C to Fe<subscript>3</subscript>Si takes precedence over conversion from Fe to Fe<subscript>3</subscript>Si. The Fe-incorporation reduces the phase separation temperature to 1000 <superscript>o</superscript>C. The graphitic carbon appears when the Fe/Si ratio is above 0.1, which is produced by the catalytic graphitization of Fe and conversion of Fe<subscript>3</subscript>C to Fe<subscript>3</subscript>Si. However, the C<subscript>free</subscript> content decreases as increase of pyrolysis temperature, structural transformation of Fe<subscript>3</subscript>C to Fe<subscript>3</subscript>Si is dominant for the formation of graphitic carbon. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
1876990X
Volume :
16
Issue :
11
Database :
Complementary Index
Journal :
SILICON (1876990X)
Publication Type :
Academic Journal
Accession number :
178954348
Full Text :
https://doi.org/10.1007/s12633-024-03046-0