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The Fe-Incorporation Effects on the Structural Evolution of SiOC Ceramics.
The Fe-Incorporation Effects on the Structural Evolution of SiOC Ceramics.
- Source :
- SILICON (1876990X); Jul2024, Vol. 16 Issue 11, p4787-4796, 10p
- Publication Year :
- 2024
-
Abstract
- Fe-modified SiOC ceramic microspheres with different Fe/Si ratio were synthesized by solvothermal method with vinyltriethoxysilane and ferrous acetylacetonate as precursors. Effects of Fe/Si molar ratio and pyrolysis temperature on structure of SiOC ceramics were investigated. The carbothermal reduction results in the transformation of Fe<subscript>2</subscript>O<subscript>3</subscript> into Fe<subscript>3</subscript>O<subscript>4</subscript> as elevation of temperature from 600 <superscript>o</superscript>C to 800 <superscript>o</superscript>C, and Fe and Fe<subscript>3</subscript>C are formed with further increase the temperature to 1000 <superscript>o</superscript>C. Fe reacts firstly with free carbon (C<subscript>free</subscript>) to form Fe<subscript>3</subscript>C, and which preferentially reacts with SiC to form Fe<subscript>3</subscript>Si as the Fe/Si ratio is below (0.1) Only Fe<subscript>3</subscript>C phase retains with the Fe/Si ratio increases to (0.2) The transformation from Fe<subscript>3</subscript>C to Fe<subscript>3</subscript>Si takes precedence over conversion from Fe to Fe<subscript>3</subscript>Si. The Fe-incorporation reduces the phase separation temperature to 1000 <superscript>o</superscript>C. The graphitic carbon appears when the Fe/Si ratio is above 0.1, which is produced by the catalytic graphitization of Fe and conversion of Fe<subscript>3</subscript>C to Fe<subscript>3</subscript>Si. However, the C<subscript>free</subscript> content decreases as increase of pyrolysis temperature, structural transformation of Fe<subscript>3</subscript>C to Fe<subscript>3</subscript>Si is dominant for the formation of graphitic carbon. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 1876990X
- Volume :
- 16
- Issue :
- 11
- Database :
- Complementary Index
- Journal :
- SILICON (1876990X)
- Publication Type :
- Academic Journal
- Accession number :
- 178954348
- Full Text :
- https://doi.org/10.1007/s12633-024-03046-0