ROLE OF INTERFACIAL ELECTRIC FIELD ON HEAT TRANSPORT: MECHANISM IN InxAl1-xN/GaN SUPERLATTICE (x = 0.1).

In this work, theoretically explored the role of the interfacial electric (IFE) field on heat transport mechanism in In_xAl_1-xN/GaN Superlattice (SL). Thermal conductivity reduction improves figure of merit (ZT) and thermoelectric device efficiency. IFE field modifies acoustic phonon properties through elastic moduli and phonon group velocity as a result of the inverse piezoelectric effect. This increases phonon scattering and Debye temperature of the materials. Acoustic property mismatch between both sides of the layer generates interfacial thermal resistance (ITR); the ITR controls cross-plan thermal conductivity. Room temperature cross-plan thermal conductivity (k) found for In_xAl_1-xN/GaN SLs (x = 0.1) in the presence (absence) of IPE field are 2.79 (3.45) Wm-1K-1. [ABSTRACT FROM AUTHOR]