Deterministic grayscale nanotopography to engineer mobilities in strained MoS2 FETs.

Field-effect transistors (FETs) based on two-dimensional materials (2DMs) with atomically thin channels have emerged as a promising platform for beyond-silicon electronics. However, low carrier mobility in 2DM transistors driven by phonon scattering remains a critical challenge. To address this issue, we propose the controlled introduction of localized tensile strain as an effective means to inhibit electron-phonon scattering in 2DM. Strain is achieved by conformally adhering the 2DM via van der Waals forces to a dielectric layer previously nanoengineered with a gray-tone topography. Our results show that monolayer MoS₂ FETs under tensile strain achieve an 8-fold increase in on-state current, reaching mobilities of 185 cm²/Vs at room temperature, in good agreement with theoretical calculations. The present work on nanotopographic grayscale surface engineering and the use of high-quality dielectric materials has the potential to find application in the nanofabrication of photonic and nanoelectronic devices. Improving the performance of 2D transistors is essential to enable their future application for beyond-silicon electronics. Here, the authors report a method to induce localized tensile strain in monolayer MoS₂ transistors, leading to enhanced electron mobilities up to 185 cm²/Vs and an 8-fold increase of the on-state current densities. [ABSTRACT FROM AUTHOR]