Indium Reduction in Bifacial Silicon Heterojunction Solar Cells with MoOx Hole Collector.

Reducing indium consumption in transparent conductive oxide (TCO) layers is crucial for mass production of silicon heterojunction (SHJ) solar cells. In this contribution, optical simulation‐assisted design and optimization of SHJ solar cells featuring MoOx hole collectors with ultra‐thin TCO layers is performed. Firstly, bifacial SHJ solar cells with MoOx as the hole transport layer (HTL) and three types of n‐contact as electron transport layer (ETL) are fabricated with 50 nm thick ITO on both sides. It is found that bilayer (nc‐Si:H/a‐Si:H) and trilayer (nc‐SiOx:H/nc‐Si:H/a‐Si:H) as n‐contacts performed electronically and optically better than monolayer (a‐Si:H) in bifacial SHJ cells, respectively. Then, as suggested by optical simulations, the same stack of tungsten‐doped indium oxide (IWO) and optimized MgF2 layers are applied on both sides of front/back‐contacted SHJ solar cells. Devices endowed with 10 nm thick IWO and bilayer n‐contact exhibit a certified efficiency of 21.66% and 20.66% when measured from MoOx and n‐contact side, respectively. Specifically, when illuminating from the MoOx side, the short‐circuit current density and the fill factor remain well above 40 mA cm−2 and 77%, respectively. Compared to standard front/rear TCO thicknesses (75 nm/150 nm) deployed in monofacial SHJ solar cells, this represents over 90% TCO reduction. As for bifacial cells featuring 50 nm thick IWO layers, a champion device with a bilayer n‐contact as ETL is obtained, which exhibits certified conversion efficiency of 23.25% and 22.75% when characterized from the MoOx side and the n‐layer side, respectively, with a bifaciality factor of 0.98. In general, by utilizing a n‐type bilayer stack, bifaciality factor is above 0.96 and it can be further enhanced up to 0.99 by switching to a n‐type trilayer stack. Again, compared to the aforementioned standard front/rear TCO thicknesses, this translates to a TCO reduction of more than 67%. [ABSTRACT FROM AUTHOR]