Effects of oxygen-related traps in silicon on the generation-recombination noise.

This work shows the effects of oxygen related traps in silicon on the generation-recombination noise and presents a procedure to determine their capture cross-sections and densities. It compares the current noise spectral density measured in p - n junctions fabricated on Czochralski-grown silicon (Cz-Si) with an analytical expression proposed by us. In those systems where two or more levels are present in the bandgap additional electrical measurements are necessary in order to discern which level is the origin of the noise. Multiple oxygen related traps can be found in the literature. A thorough study of their associated levels, and of different techniques employed to characterize them is made in this paper. We have found that one of these levels behaves both as a minority or majority trap, depending on the temperature. The parameters proposed for this level can link different results found in the literature. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]