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Optimization of solid-state dye sensitized solar cells (SSDSSCs) efficiency by incorporating different electron transport layers (ETLs) using SCAPS-1D.

Authors :
Sumona, Farhana Bari
Kashif, Muhammad
Bencherif, Hichem
Mahmud, Nahid-Al
Bahajjaj, Aboud Ahmed Awadh
Shafqat, Syed Salman
Source :
Optical & Quantum Electronics; Oct2024, Vol. 56 Issue 10, p1-21, 21p
Publication Year :
2024

Abstract

Solid-state dye-sensitized solar cells (SSDSSCs) are part of the thin-film solar cell category, garnering substantial research attention for over two decades. This enduring interest is fuelled by their cost-effectiveness, straightforward preparation techniques, minimal toxicity and manufacturability. The device is depicted using SCAPS-1D simulation. SSDSSCs employing X60, also known as octakis (4-methoxyphenyl) spiro [fluorene-9,9′xanthene]-2,2′7,7′-tetraamine, as the hole transport layer (HTL) are introduced. The initial outcomes of the study demonstrated an efficacy of 7.34%, a fill factor (FF) of 81.19%, a short-circuit current (J<subscript>sc</subscript>) 6.778 mA/cm<superscript>2</superscript> and an open-circuit voltage (V<subscript>oc</subscript>) 1.335 V. Various electron transport layers (ETLs; ZnO, PCBM, SnO<subscript>2</subscript> and CdS) are simulated in conjunction with the proposed device configuration to determine the optimal power conversion efficiency (PCE). Results show that utilizing ZnO as the ETL for SSDSSC yields superior performance compared with alternative ETLs such as PCBM, SnO<subscript>2</subscript> and CdS. Through the optimization of thickness, donor and acceptor doping density, defect density, temperature and back contact, the PCE, FF, J<subscript>sc</subscript> and V<subscript>oc</subscript> were optimized to 9.60%, 84.83%, 7.318 mA/cm<superscript>2</superscript> and 1.5457 V, respectively. ZnO was used as ETL, N719 dye as absorber and X60 as HTL for enhanced performance. The fluorine-doped tin oxide/ZnO/N719 dye/X60/Au device structure enhances the advancement and manufacturing of SSDSSCs. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
03068919
Volume :
56
Issue :
10
Database :
Complementary Index
Journal :
Optical & Quantum Electronics
Publication Type :
Academic Journal
Accession number :
180588411
Full Text :
https://doi.org/10.1007/s11082-024-07493-2