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In0.5Ga0.5As/GaAs Quantum Dot Infrared Photodetectors Grown by Metal-Organic Chemical Vapor Deposition.
- Source :
- IEEE Electron Device Letters; Sep2005, Vol. 26 Issue 9, p628-630, 3p, 3 Graphs
- Publication Year :
- 2005
-
Abstract
- We report the growth by low-pressure metal-organic chemical vapor deposition, fabrication, and characterization of ten-layer In<subscript>0.5</subscript>Ga<subscript>0.5</subscript>As/GaAs quantum dot infrared photodetectors. Normal incidence photoresponse of the detector was obtained at 5.9 µm. The 77-K peak responsivity was 5.6 mA/W with the detectivity D* of 1.2 × 10<superscript>9</superscript> cm · Hz<superscript>½</superscript>/W at the bias of 0.4 V. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 07413106
- Volume :
- 26
- Issue :
- 9
- Database :
- Complementary Index
- Journal :
- IEEE Electron Device Letters
- Publication Type :
- Academic Journal
- Accession number :
- 18080492
- Full Text :
- https://doi.org/10.1109/LED.2005.853635