Synergistic effect of total ionizing dose and single event gate rupture in MOSFET with Si3N4–SiO2 stacked gate.

The synergistic effect of total ionizing dose on single event gate rupture (SEGR) was simulated in the vertical double diffusion metal oxide semiconductor device with SiO₂–Si₃N₄ stacked gate layer. In comparison to the device with a single SiO₂ gate layer, the synergistic effect was revealed to be suppressed in the device with SiO₂–Si₃N₄ stacked layer. The mechanism is that the oxide layer is a sensitive area of the SEGR effect. Compared with the single SiO₂ layer, the superposition of the additional electric field formed by the trapped holes in the sensitive area of the stacked layer leads to a decrease in the sensitivity of the synergistic effect, which is more obvious with increasing the volume of the Si₃N₄ layer. [ABSTRACT FROM AUTHOR]