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Improvement of the electrochemical performance of Bi2O3 by electron beam irradiation.

Authors :
Yang, Shiju
Qian, Libing
Zhang, Bo
Wang, Tingting
Li, Yunfei
Source :
Journal of Materials Science: Materials in Electronics; Nov2024, Vol. 35 Issue 32, p1-11, 11p
Publication Year :
2024

Abstract

The method of preparation is a critical factor affecting the structure and properties of Bi<subscript>2</subscript>O<subscript>3</subscript> material. In this work, Bi<subscript>2</subscript>O<subscript>3</subscript> was synthesized through calcination (denoted as Bi<subscript>2</subscript>O<subscript>3</subscript>–C) and hydrothermal methods (denoted as Bi<subscript>2</subscript>O<subscript>3</subscript>–H), utilizing bismuth-based metal–organic framework (Bi–MOF) as the precursor. As an electrode material for supercapacitors, Bi<subscript>2</subscript>O<subscript>3</subscript>–H demonstrated outstanding rate performance (515 F g<superscript>−1</superscript> at 50 A g<superscript>−1</superscript>) and remarkable cycle stability (74% retention after 4000 cycles). Subsequently, the Bi<subscript>2</subscript>O<subscript>3</subscript>-H underwent further processing through electron beam irradiation (EBI), resulting in a sample designated as Bi<subscript>2</subscript>O<subscript>3</subscript>–I. Following EBI treatment, the crystalline characteristics of Bi<subscript>2</subscript>O<subscript>3</subscript>–I and the concentration of oxygen vacancies (OVs) exhibited a significant improvement, thereby augmenting the material's conductivity. Because the positively charged OVs can quickly attract OH<superscript>−</superscript> from the electrolyte to the electrode surface, thereby accelerating the REDOX reaction, the current control mechanism of Bi<subscript>2</subscript>O<subscript>3</subscript>–I is partially derived from a surface-controlled pseudo-capacitance process. The irradiated Bi<subscript>2</subscript>O<subscript>3</subscript>-I electrode demonstrated superior capacitance (990 F<superscript>−1</superscript> at 2 A g<superscript>−1</superscript>), enhanced rate performance (585 F<superscript>−1</superscript> at 50 A g<superscript>−1</superscript>), and remarkable cycling stability (83% retention after 4000 cycles). [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
09574522
Volume :
35
Issue :
32
Database :
Complementary Index
Journal :
Journal of Materials Science: Materials in Electronics
Publication Type :
Academic Journal
Accession number :
181003486
Full Text :
https://doi.org/10.1007/s10854-024-13830-8