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Improvement of the electrochemical performance of Bi2O3 by electron beam irradiation.
- Source :
- Journal of Materials Science: Materials in Electronics; Nov2024, Vol. 35 Issue 32, p1-11, 11p
- Publication Year :
- 2024
-
Abstract
- The method of preparation is a critical factor affecting the structure and properties of Bi<subscript>2</subscript>O<subscript>3</subscript> material. In this work, Bi<subscript>2</subscript>O<subscript>3</subscript> was synthesized through calcination (denoted as Bi<subscript>2</subscript>O<subscript>3</subscript>–C) and hydrothermal methods (denoted as Bi<subscript>2</subscript>O<subscript>3</subscript>–H), utilizing bismuth-based metal–organic framework (Bi–MOF) as the precursor. As an electrode material for supercapacitors, Bi<subscript>2</subscript>O<subscript>3</subscript>–H demonstrated outstanding rate performance (515 F g<superscript>−1</superscript> at 50 A g<superscript>−1</superscript>) and remarkable cycle stability (74% retention after 4000 cycles). Subsequently, the Bi<subscript>2</subscript>O<subscript>3</subscript>-H underwent further processing through electron beam irradiation (EBI), resulting in a sample designated as Bi<subscript>2</subscript>O<subscript>3</subscript>–I. Following EBI treatment, the crystalline characteristics of Bi<subscript>2</subscript>O<subscript>3</subscript>–I and the concentration of oxygen vacancies (OVs) exhibited a significant improvement, thereby augmenting the material's conductivity. Because the positively charged OVs can quickly attract OH<superscript>−</superscript> from the electrolyte to the electrode surface, thereby accelerating the REDOX reaction, the current control mechanism of Bi<subscript>2</subscript>O<subscript>3</subscript>–I is partially derived from a surface-controlled pseudo-capacitance process. The irradiated Bi<subscript>2</subscript>O<subscript>3</subscript>-I electrode demonstrated superior capacitance (990 F<superscript>−1</superscript> at 2 A g<superscript>−1</superscript>), enhanced rate performance (585 F<superscript>−1</superscript> at 50 A g<superscript>−1</superscript>), and remarkable cycling stability (83% retention after 4000 cycles). [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09574522
- Volume :
- 35
- Issue :
- 32
- Database :
- Complementary Index
- Journal :
- Journal of Materials Science: Materials in Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 181003486
- Full Text :
- https://doi.org/10.1007/s10854-024-13830-8