Structural, Optical, and Electrophysical Properties of La0.13Bi0.87FeO3 Films Obtained by High-Frequency Laser Evaporation in Vacuum.

Authors :: Bushinsky, M. V.
Chobot, A. N.
Baran, L. V.
Malyutina-Bronskaya, V. V.
Obradovic, B. M.
Sakan, N. M.
Bosak, N. A.
Source :: Journal of Applied Spectroscopy; Nov2024, Vol. 91 Issue 5, p1003-1009, 7p
Publication Year :: 2024
Abstract: Nanostructured thin films on a silicon substrate were obtained by the action of high-frequency repetitively pulsed f ~ 10–13 kHz laser radiation with wavelength λ = 1.064 μm and power density q = 57 MW/cm<superscript>2</superscript> on an La<subscript>0.13</subscript>Bi<subscript>0.87</subscript>FeO<subscript>3</subscript> target at a pressure in the vacuum chamber p = 4.6 Pa. The morphology of the La<subscript>0.13</subscript>Bi<subscript>0.87</subscript>FeO<subscript>3</subscript> thin films was studied using atomic force microscopy. Transmission spectra of the films in the visible and near- and mid-IR regions were obtained. The electrophysical characteristics of the La<subscript>0.13</subscript>Bi<subscript>0.87</subscript>FeO<subscript>3</subscript> structures were analyzed. [ABSTRACT FROM AUTHOR]

Subjects :: SILICON films
ATOMIC force microscopy
THIN films
SUBSTRATES (Materials science)
LASER beams

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