Recent improvements in quantification of energy‐dispersive X‐ray spectra and maps in electron microscopy of semiconductors.

This tutorial‐style article describes recent improvements in the quantitative application of energy‐dispersive X‐ray spectroscopy and mapping in electron microscopes to semiconductors, with a focus on spatial resolution, sensitivity and accuracy obtainable in characterising the chemical composition of thin layers, quantum wells and quantum dots. Various approaches applicable in scanning electron microscopy of bulk and (scanning) transmission electron microscopy of thin film samples are outlined. Applications to semiconductor quantum well systems, mainly based on indium gallium arsenide and silicon germanium studied in the author's laboratory, are provided as examples. [ABSTRACT FROM AUTHOR]