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Design, modeling, and fabrication of high frequency Oersted lines for electron spin manipulation in silicon based quantum devices.

Authors :
Gaunin, Mark-Yves
Namboodiri, Pradeep
Restelli, Alessandro
Kashid, Ranjit
Wang, Xiqiao
Fei, Fan
Courts, Brian
Utsav
Kamalon Pulikodan, Vijith
Wyrick, Jonathan
Silver, Richard
Source :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Dec2024, Vol. 42 Issue 6, p1-8, 8p
Publication Year :
2024

Abstract

Coherent manipulation of electron spins is one of the central challenges of silicon-based quantum computing efforts. Electron spin resonance (ESR) lines, or Oersted lines, allow 10–60 GHz radio frequency (RF) pulses to induce an electromagnetic field that drives Rabi oscillations in a quantum dot interface. The frequency of these Rabi oscillations is directly proportional to the strength of the induced electromagnetic field. We outline a methodology for the design of a printed circuit board and an ESR line that is able to transmit an RF pulse in the 40 GHz regime and induce an oscillating magnetic field onto a qubit device. We propose and implement a novel design by coupling a second symmetrical Oersted line in the opposing direction of the first to act as an antenna for the purpose of monitoring power and magnetic field strength at the embedded device interface. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
21662746
Volume :
42
Issue :
6
Database :
Complementary Index
Journal :
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics
Publication Type :
Academic Journal
Accession number :
181982721
Full Text :
https://doi.org/10.1116/6.0004051