Self–Heating Effect in Planar GaN Diode with 2D- h-BN - Layer.

In this research, we have studied a self-heating effect in hybrid 2D-3D heterostructure diode, considering planar GaN-based structure of 1280 nm with n-type channel and donor concentration of 6·10¹⁷ cm^-3. Two type c-plane substrate-based sapphire and GaN are considered in order to investigate heating effects in diode channel. Monolayer hexagonal boron nitride (h-BN) on the top of canal is considered as an element for thermal control of the diode. The model of a heating based on macroscopic thermal parameters of materials is used. The simulation of diode operation was carried out using the Ensemble Monte Carlo Technique selfconsistently with numerical solving of system of heat equations by full multigrid (FMG) method. Transport properties of diode is considered under condition of high electric fields and impact ionization. Characteristics of the diode with both h-BN monolayer and without one were obtained at DC applied voltage. A temperature distribution in diode is obtained with account of thermal boundary resistance at each interface, considering voltage range of 0-20 V. In strong electric field in anode, the heating rises maximal temperature in channel diode up to over 600 K. The h-BN was found to affect the temperature magnitudes and their redistribution in diode channel. Temperature decrease can achieve 3 % and increase in case of high temperature region. Role h-BN monolayer as a factor avoiding formation of localized overheating of a device is demonstrated. It is shown that, h-BN monolayer is effective in diode using the substrate with low thermal conductivity and can be applied for semiconductor devices with length of several micrometers. [ABSTRACT FROM AUTHOR]