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Inelastic Electron Tunnelling Spectroscopy (IETS) of High-k Dielectrics.
- Source :
- AIP Conference Proceedings; 2005, Vol. 788 Issue 1, p73-78, 6p
- Publication Year :
- 2005
-
Abstract
- It is shown that inelastic electron tunnelling spectroscopy (IETS) is a powerful technique to study microstructures and defects in Metal-Insulator-Semiconductor (MIS) systems where the insulator is sufficiently thin to allow significant tunnelling current to flow through. The information that may be revealed by IETS contains a wide variety of inelastic interactions, including interactions with phonons, various bonding vibrations, bonding defects, and impurities. Examples will be given to illustrate the capabilities of this technique. © 2005 American Institute of Physics [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 0094243X
- Volume :
- 788
- Issue :
- 1
- Database :
- Complementary Index
- Journal :
- AIP Conference Proceedings
- Publication Type :
- Conference
- Accession number :
- 18225904
- Full Text :
- https://doi.org/10.1063/1.2062941